射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor 2110-2200 MHz, 56 W Avg., 28 V
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor 1805-1880 MHz, 87 W Avg., 31.5 V
射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF LDMOS Wideband Integrated Power Amplifier, 2300-2690 MHz, 10.5 W AVG., 28 V
射频金属氧化物半导体场效应(RF MOSFET)晶体管 LATERAL N--CHANNEL RF POWER LDMOS TRANSISTOR, 1-2000 MHz, 4 W, 28 V